Properties of MRAM
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•Intrinsically
radiation hard
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•No known wear out
mechanism
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•Nonvolatile, no power
required to store data
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•Size and speed
competitive with rad-hard flip flops
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•Enables “deep-sleep” mode
for extreme power savings on long space missions
Approach
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•Build
Magnetic Tunneling Junction memory cell with patent-pending
“Pac-Man” shape
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• Differential
circuit with two MTJ cells
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• Unique
“one-wire” programming scheme
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• Integrate
onto American Semiconductor's FlexFET rad-hard CMOS process
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• Build
low-power demonstration device
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